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Non-volatile Resistive Random Access Memory based on Wholly aromatic Polyimide/Graphene Oxide Nanocomposite

Choi Ju-Young ⁽¹⁾, Lee Jeongjun ⁽²⁾, Jeon Jihyun ⁽²⁾, Im Jaehyuk ⁽²⁾, Jang Junhwan ⁽²⁾, Jin Seung-Won ⁽¹⁾, Joung Hyeyoung ⁽¹⁾, Nam Kyeong-Nam ⁽¹⁾, Park Hyeong-Joo ⁽¹⁾, Kim Dong-Min ⁽¹⁾, Song In-Ho ⁽¹⁾, Yang Jaesung ⁽¹⁾, Cho Soohaeng ⁽²⁾, Chung Chan-Moon ^(1)*

⁽¹⁾ Department of Chemistry, Yonsei University - Wonju - SouthKorea, ⁽²⁾ Department of Physics, Yonsei University - Wonju - SouthKorea

Recently, resistive random access memory (ReRAM) have attracted favorable attention from researchers as a next generation nonvolatile memory, because it has simple metal-insulator-metal structure and excellent operating characteristics. In this work, a graphene oxide-based wholly aromatic polyimide (PI-GO) nanocomposite was prepared and later used as memory layer (composed of a GO and a PI derived from 4,4’-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 2,6-diaminoanthracene (AnDA)) in the fabrication of a ReRAM device. The device showed write-once-read-many-times (WORM) characteristic with an excellent ON/OFF ratio (~10^8), long retention time (~10^4 s), good endurance (10^4th cycle), and an outstanding yield (92%). The improvement of the memory device’s performance was achieved by post-annealing process of the memory device. The mechanisms associated with the memory effect are explained from electron density difference map (EDDM) calculations. These results suggested that PI-GO nanocomposite is a suitable active material for low-cost, solution processable next generation nonvolatile memory.