pps proceeding - Abstract Preview
pps proceeding
Symposium: G04 - Polymerization and synthesis
Poster Presentation
 
 

Novel AIE-Active Aromatic Polyamide Electret Used as Phototransistor Memory and Photosensor

Cheng Shun-Wen (1), Han Ting (2), Huang Teng-Yung (1), Chang Chien Yu-Hsin (3), Liu Cheng-Liang (3), Tang Ben Zhong (2), Liou Guey-Sheng (1)*

(1) National Taiwan University - Taipei - Taiwan, (2) The Hong Kong University of Science and Technology - Hong Kong - China, (3) National Central University - Taoyuan - Taiwan

A novel aggregation induced emission (AIE)-active polyamide TPA-CN-TPE with a high fluorescence quantum yield of 16% was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFET)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based non-volatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photo-induced memory behavior can maintain for over 10^4 s between these two states with an on/off ratio of 10^4, and the memory switching can be steadily operated for many times. With high photoresponsivity (R) and photosensitivity (S), this organic phototransistor integrated with AIE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AIE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.